Single Carbon Nanotube Transistor at GHz Frequency
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- 作者：J. Chaste ; L. Lechner ; P. Morfin ; G. Fè ; ve ; T. Kontos ; J.-M. ; Berroir ; D. C. Glattli ; H. Happy ; P. Hakonen ; B. Plaç ; ais
- 刊名：Nano Letters
- 出版年：2008
- 出版时间：February 2008
- 年：2008
- 卷：8
- 期：2
- 页码：525 - 528
- 全文大小：138K
- 年卷期：v.8,no.2(February 2008)
- ISSN：1530-6992
文摘
We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1-1.6 GHzrange, we deduce device transconductance gm and gate-nanotube capacitance Cg of micro- and nanometric devices. A large and frequency-independent gm ~ 20 
S is observed on short devices, which meets the best dc results. The capacitance per unit gate length of 60 aF/mis typical of top gates on a conventional oxide with 
~ 10. This value is a factor of 3-5 below the nanotube quantum capacitance which,according to recent simulations, favors high transit frequencies fT = gm/2
Cg. For our smallest devices, we find a large fT ~ 50 GHz with noevidence of saturation in length dependence.
S is observed on short devices, which meets the best dc results. The capacitance per unit gate length of 60 aF/mis typical of top gates on a conventional oxide with ~ 10. This value is a factor of 3-5 below the nanotube quantum capacitance which,according to recent simulations, favors high transit frequencies fT = gm/2Cg. For our smallest devices, we find a large fT ~ 50 GHz with noevidence of saturation in length dependence.