Silicon Nanowire Array Photelectrochemical Cells

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• 作者：Adrian P. Goodey ; Sarah M. Eichfeld ; Kok-Keong Lew ; Joan M. Redwing ; Thomas E. Mallouk
• 刊名：Journal of the American Chemical Society
• 出版年：2007
• 出版时间：October 17, 2007
• 年：2007
• 卷：129
• 期：41
• 页码：12344 - 12345
• 全文大小：168K
• 年卷期：v.129,no.41(October 17, 2007)
• ISSN：1520-5126

文摘

Silicon nanowire arrays were grown by vapor-liquid-solid growth from SiH₄ vapor at 500 C, and tested as photocathodes in [Ru(bpy)₃]²⁺ (bpy = 2,2'-bipyridyl)/acetonitrile solutions. Si nanowires were grown in anodic aluminum oxide membranes by first electroplating 50 m long Co wires capped with 250 nm gold segments in the pores and then reacting with SiH₄. The resulting Si nanowires protruded 10-15 m beyond the top surface of the membrane but were degeneratively doped, most likely by Al from the membrane. Nanowires grown in the same manner on Si(111)/Au substrates could be controllably doped p-type by addition of trimethylboron. These p-Si nanowire arrays gave a photovoltage of 220 mV in [Ru(bpy)₃]²⁺ solution when illuminated by white light.