Selective Plating for Junction Delineation in Silicon Nanowires
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文摘
The in situ growth of p-n junctions in silicon nanowires enables the fabrication of a variety of nanoscale electronic devices. We have developeda method for selective coating of Au onto n-type segments of silicon nanowire p-n junctions. Selective plating allows for quick verificationof the position of p-n junctions along the nanowire using electron microscopy and allows for measurement of segment length.

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