Disorder Dominated Microwave Conductance Spectra of Doped Silicon Nanowire Arrays

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• 作者：Clark Highstrete ; Mark Lee ; Aaron L. Vallett ; Sarah M. Eichfeld ; Joan M. Redwing ; Theresa S. Mayer
• 刊名：Nano Letters
• 出版年：2008
• 出版时间：June 2008
• 年：2008
• 卷：8
• 期：6
• 页码：1557 - 1561
• 全文大小：935K
• 年卷期：v.8,no.6(June 2008)
• ISSN：1530-6992

文摘

Conductance spectra of doped silicon nanowire (SiNW) arrays were measured from 0.5 to 50 GHz at temperatures between 4 and 293 K. For arrays consisting of 11 to >10⁴ SiNWs, the conductance was found to increase with frequency as f^s, with 0.25 < s < 0.45, consistent with behavior found universally in disordered systems. A possible cause is disorder from Si/SiO_x interface states dominating the conductance due to the high surface-to-volume ratio of the nanowires.