Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition

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• 作者：Ashkan Behnam ; Austin S. Lyons ; Myung-Ho Bae ; Edmond K. Chow ; Sharnali Islam ; Christopher M. Neumann ; Eric Pop
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：September 12, 2012
• 年：2012
• 卷：12
• 期：9
• 页码：4424-4430
• 全文大小：384K
• 年卷期：v.12,no.9(September 12, 2012)
• ISSN：1530-6992

文摘

We study graphene nanoribbon (GNR) interconnects obtained from graphene grown by chemical vapor deposition (CVD). We report low- and high-field electrical measurements over a wide temperature range, from 1.7 to 900 K. Room temperature mobilities range from 100 to 500 cm²路V^鈥?路s^鈥?, comparable to GNRs from exfoliated graphene, suggesting that bulk defects or grain boundaries play little role in devices smaller than the CVD graphene crystallite size. At high-field, peak current densities are limited by Joule heating, but a small amount of thermal engineering allows us to reach 2 脳 10⁹ A/cm², the highest reported for nanoscale CVD graphene interconnects. At temperatures below 5 K, short GNRs act as quantum dots with dimensions comparable to their lengths, highlighting the role of metal contacts in limiting transport. Our study illustrates opportunities for CVD-grown GNRs, while revealing variability and contacts as remaining future challenges.

Keywords:

Graphene; nanoribbons; interconnects; current density; temperature