Intermixing during Epitaxial Growth of van der Waals Bonded Nominal GeTe/Sb2Te3 Superlattices

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• 作者：Ruining Wang ; Valeria Bragaglia ; Jos E. Boschker ; Raffaella Calarco
• 刊名：Crystal Growth & Design
• 出版年：2016
• 出版时间：July 6, 2016
• 年：2016
• 卷：16
• 期：7
• 页码：3596-3601
• 全文大小：416K
• 年卷期：0
• ISSN：1528-7505

文摘

In the present work, GeTe and Sb₂Te₃ van der Waals bonded superlattices epitaxially grown by molecular beam epitaxy are investigated. These structures are grown on passivated Si substrates, resulting in one single epitaxial domain and its twinned domain, both sharing the same out-of-plane orientation. Supported by X-ray diffraction and Raman spectroscopy, attention is called to the thermodynamically driven tendency of GeTe and Sb₂Te₃ to intermix into a Ge–Sb–Te (GST) alloy at the interfaces. A growth model is proposed to explain how these GST structures are formed.