Electrical Characteristics of Carbon Nanotube Devices Prepared with Single Oxidative Point Defects

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• 作者：Landon Prisbrey ; David Roundy ; Kerstin Blank ; Leonard S. Fifield ; Ethan D. Minot
• 刊名：The Journal of Physical Chemistry C
• 出版年：2012
• 出版时间：January 19, 2012
• 年：2012
• 卷：116
• 期：2
• 页码：1961-1965
• 全文大小：406K
• 年卷期：v.116,no.2(January 19, 2012)
• ISSN：1932-7455

文摘

A thorough understanding of how electrons pass through point defects in carbon nanotubes is crucial for building carbon nanotube devices. We have generated point defects in the sidewalls of pristine carbon nanotubes via voltage pulses from a conducting atomic force microscope probe and studied the resulting changes in electron transport properties. We find that the incorporation of an oxidative defect leads to a variety of possible electrical signatures including sudden switching events, resonant scattering, and breaking of the symmetry between electron and hole transport. We discuss the relationship between these different electronic signatures and the chemical structure/charge state of the defect. Tunneling through a defect-induced Coulomb barrier is modeled with numerical Verlet integration of Schrodinger鈥檚 equation and compared with experimental results.