Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties

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• 作者：Joshua A. Robinson ; Michael LaBella III ; Kathleen A. Trumbull ; Xiaojun Weng ; Randall Cavelero ; Tad Daniels ; Zachary Hughes ; Mathew Hollander ; Mark Fanton ; David Snyder
• 刊名：ACS Nano
• 出版年：2010
• 出版时间：May 25, 2010
• 年：2010
• 卷：4
• 期：5
• 页码：2667-2672
• 全文大小：394K
• 年卷期：0
• ISSN：1936-086X

文摘

We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al₂O₃, HfO₂, TiO₂, and Ta₂O₅ varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta₂O₅, while the deposition if TiO₂ appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.