Nonlithographic Fabrication of Crystalline Silicon Nanodots on Graphene

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• 作者：Guo鈥檃n Tai ; Kai Wang ; Zhenhua Sun ; Jun Yin ; Sheung Mei Ng ; Jianxin Zhou ; Feng Yan ; Chi Wah Leung ; Kin Hung Wong ; Wanlin Guo ; Shu Ping Lau
• 刊名：The Journal of Physical Chemistry C
• 出版年：2012
• 出版时间：January 12, 2012
• 年：2012
• 卷：116
• 期：1
• 页码：532-537
• 全文大小：987K
• 年卷期：v.116,no.1(January 12, 2012)
• ISSN：1932-7455

文摘

We report a nonlithographic fabrication method to grow uniform and large-scale crystalline silicon (Si) nanodot (c-SiNDs) arrays on single-layer graphene by an ultrathin anodic porous alumina template and Ni-induced Si crystallization technique. The lateral height of the template can be as thin as 160 nm and the crystallization of Si can be achieved at a low temperature of 400 掳C. The effects of c-SiNDs on graphene were studied by Raman spectroscopy. Furthermore, the c-SiNDs/graphene based field effect transistors were demonstrated.