Nanowire Lithography on Silicon
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- 作者：Alan Colli ; Andrea Fasoli ; Simone Pisana ; Yongqing Fu ; Paul Beecher ; William I. Milne ; Andrea C. Ferrari
- 刊名：Nano Letters
- 出版年：2008
- 出版时间：May 2008
- 年：2008
- 卷：8
- 期：5
- 页码：1358 - 1362
- 全文大小：1383K
- 年卷期：v.8,no.5(May 2008)
- ISSN：1530-6992
文摘
Nanowire lithography (NWL) uses nanowires (NWs), grown and assembled by chemical methods, as etch masks to transfer their one-dimensional morphology to an underlying substrate. Here, we show that SiO2 NWs are a simple and compatible system to implement NWL on crystalline silicon and fabricate a wide range of architectures and devices. Planar field-effect transistors made of a single SOI-NW channel exhibit a contact resistance below 20 kΩ and scale with the channel width. Further, we assess the electrical response of NW networks obtained using a mask of SiO2 NWs ink-jetted from solution. The resulting conformal network etched into the underlying wafer is monolithic, with single-crystalline bulk junctions; thus no difference in conductivity is seen between a direct NW bridge and a percolating network. We also extend the potential of NWL into the third dimension, by using a periodic undercutting that produces an array of vertically stacked NWs from a single NW mask.