Reversible Resistive Switching and Multilevel Recording in La0.7Sr0.3MnO3 Thin Films for Low Cost Nonvolatile Memories

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• 作者：Csar Moreno ; Carmen Munuera ; Sergio Valencia ; Florian Kronast ; Xavier Obradors ; Carmen Ocal
• 刊名：Nano Letters
• 出版年：2010
• 出版时间：October 13, 2010
• 年：2010
• 卷：10
• 期：10
• 页码：3828-3835
• 全文大小：632K
• 年卷期：v.10,no.10(October 13, 2010)
• ISSN：1530-6992

文摘

On the basis of a scanning probe microscopy strategy, we propose a combined methodology capable to program nonvolatile multilevel data and read them out in a noninvasive manner. In the absence of the common two-electrode cell geometry, this nanoscale approach permits, in addition, investigating the relevance of inherent film properties. We demonstrate the feasibility of modifying the local electronic response of La_0.7Sr_0.3MnO₃ to obtain nanostructures with switchable resistance embedded in low cost oxide thin films, which constitutes a promising approach for fabricating high density nonvolatile memories.

Keywords:

Resistive switching; Kelvin probe microscopy; RRAM; transition metal oxides