Vertical 鈥淚II鈥揤鈥?V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering
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- 作者：S貌nia Conesa-Boj ; Eleonora Russo-Averchi ; Anna Dalmau-Mallorqui ; Jacob Trevino ; Emanuele F. Pecora ; Carlo Forestiere ; Alex Handin ; Martin Ek ; Ludovit Zweifel ; L. Reine Wallenberg ; Daniel R眉ffer ; Martin Heiss ; David Troadec ; Luca Dal Negro ; Philippe Caroff ; Anna Fontcuberta i Morral
- 刊名：ACS Nano
- 出版年：2012
- 出版时间：December 21, 2012
- 年：2012
- 卷：6
- 期：12
- 页码：10982-10991
- 全文大小：753K
- 年卷期：v.6,no.12(December 21, 2012)
- ISSN：1936-086X
文摘
We report on a new form of III鈥揤 compound semiconductor nanostructures growing epitaxially as vertical V-shaped nanomembranes on Si(001) and study their light-scattering properties. Precise position control of the InAs nanostructures in regular arrays is demonstrated by bottom-up synthesis using molecular beam epitaxy in nanoscale apertures on a SiO2 mask. The InAs V-shaped nanomembranes are found to originate from the two opposite facets of a rectangular pyramidal island nucleus and extend along two opposite 111 B directions, forming flat {110} walls. Dark-field scattering experiments, in combination with light-scattering theory, show the presence of distinctive shape-dependent optical resonances significantly enhancing the local intensity of incident electromagnetic fields over tunable spectral regions. These new nanostructures could have interesting potential in nanosensors, infrared light emitters, and nonlinear optical elements.