Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth

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• 作者：Stefano Leone ; Franziska C. Beyer ; Anne Henry ; Carl Hemmingsson ; Olof Kordina ; Erik Janzn
• 刊名：Crystal Growth & Design
• 出版年：2010
• 出版时间：August 4, 2010
• 年：2010
• 卷：10
• 期：8
• 页码：3743-3751
• 全文大小：1110K
• 年卷期：v.10,no.8(August 4, 2010)
• ISSN：1528-7505

文摘

In this study, chloride-based chemical vapor deposition (CVD) of SiC is used either to grow epitaxial layers at high growth rate and to facilitate homopolytypic growth on on-axis substrates or to grow bulk material at temperatures lower than 2000 °C. A vertical reactor configuration with an inlet of gas flow placed at the bottom of the reactor chamber and the exhaust at the top of it has been used. The chlorinated precursors have helped to eliminate or greatly reduce cluster formation, thereby allowing the deposition of thick SiC epilayers at growth rates exceeding 300 μm/h at 1700−1900 °C. Up to 1.5 mm thick homoepitaxial layers have been grown on up to 75 mm diameter 4H- or 6H-SiC wafers. Both on-axis and off-axis, Si-face and C-face polarities have been used. Our results show great promise for the realization of a high growth rate epitaxial process suitable for bulk growth at temperatures lower than those typically used. Such a process is interesting on account of the higher quality material and lower operating cost.