Self-Assembled GaN Nanowires on Diamond
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- 作者：Fabian Schuster ; Florian Furtmayr ; Reza Zamani ; Cesar Mag茅n ; Joan R. Morante ; Jordi Arbiol ; Jose A. Garrido ; Martin Stutzmann
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：May 9, 2012
- 年：2012
- 卷：12
- 期：5
- 页码：2199-2204
- 全文大小：429K
- 年卷期：v.12,no.5(May 9, 2012)
- ISSN：1530-6992
文摘
We demonstrate the nucleation of self-assembled, epitaxial GaN nanowires (NWs) on (111) single-crystalline diamond without using a catalyst or buffer layer. The NWs show an excellent crystalline quality of the wurtzite crystal structure with m-plane faceting, a low defect density, and axial growth along the c-axis with N-face polarity, as shown by aberration corrected annular bright-field scanning transmission electron microscopy. X-ray diffraction confirms single domain growth with an in-plane epitaxial relationship of (101虆0)GaN (011虆)Diamond as well as some biaxial tensile strain induced by thermal expansion mismatch. In photoluminescence, a strong and sharp excitonic emission reveals excellent optical properties superior to state-of-the-art GaN NWs on silicon substrates. In combination with the high-quality diamond/NW interface, confirmed by high-resolution transmission electron microscopy measurements, these results underline the potential of p-type diamond/n-type nitride heterojunctions for efficient UV optoelectronic devices.