The Interface Reaction and Schottky Barrier Between Metals and CdZnTe

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• 作者：Gangqiang Zha ; Wanqi Jie ; Tingting Tan ; Wenhua Zhang ; Faqiang Xu
• 刊名：Journal of Physical Chemistry C
• 出版年：2007
• 出版时间：August 30, 2007
• 年：2007
• 卷：111
• 期：34
• 页码：12834 - 12838
• 全文大小：250K
• 年卷期：v.111,no.34(August 30, 2007)
• ISSN：1932-7455

文摘

The Schottky barrier heights of Au and Ag contacts on the clean CdZnTe surfaces were measured bysynchrotron radiation photoemission spectroscopy (SRPES). Meanwhile, the interface reactions between metalsand CdZnTe were determined. The interface reaction was found to be a critical factor determining the barrierheights between metals and CdZnTe. Ohmic contact was obtained by electroless deposition of AuCl₃ solution,and the interface chemical reaction and interface layer were analyzed. The CdTeO₃ interface induced ohmiccontact model is proposed to explain the electrical properties of electroless Au contacts with different treatments.