文摘
Angle-resolved two-photon photoemission was used to study the energy relaxation, population decay, andlocalization dynamics of image potential state (IPS) electrons in ultrathin films of dimethylsulfoxide (DMSO)on an Ag(111) substrate. Dynamic energy shifts of 50 ± 10 meV and 220 ± 10 meV were observed for n =1 IPS electrons at one monolayer and two monolayer coverages of DMSO, respectively. The difference inenergy shifts is attributed to rotational hindrance of the molecular dipole in the chemisorptive first monolayer.The finding confirms the proposed mechanism for the low differential capacitance of dimethylsulfoxide atnoble metal interfaces in solution. A novel description of the IPS as a surface capacitance is presented tofacilitate comparisons with electrochemical systems.