Metal鈭扢olecule Schottky Junction Effects in Surface Enhanced Raman Scattering

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• 作者：Manas Ranjan Gartia ; Tiziana C. Bond ; Gang Logan Liu
• 刊名：Journal of Physical Chemistry A
• 出版年：2011
• 出版时间：January 27, 2011
• 年：2011
• 卷：115
• 期：3
• 页码：318-328
• 全文大小：669K
• 年卷期：v.115,no.3(January 27, 2011)
• ISSN：1520-5215

文摘

We propose a complementary interpretation of the mechanism responsible for the strong enhancement observed in surface enhanced raman scattering (SERS). The effect of a strong static local electric field due to the Schottky barrier at the metal鈭抦olecule junction on SERS is systematically investigated. The study provides a viable explanation to the low repeatability of SERS experiments as well as the Raman peak shifts as observed in SERS and raw Raman spectra. It was found that a strong electrostatic built-in field at the metal-molecule junction along specific orientations can result in 2鈭? more orders of enhancement in SERS.