Lanthanide Oxide Thin Films by Metalorganic Chemical Vapor Deposition Employing Volatile Guanidinate Precursors

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• 作者：Andrian P. Milanov ; Teodor Toader ; Harish Parala ; Davide Barreca ; Alberto Gasparotto ; Claudia Bock ; Hans-Werner Becker ; Divine K. Ngwashi ; Richard Cross ; Shashi Paul ; Ulrich Kunze ; Roland A. Fischer ; A
• 刊名：Chemistry of Materials
• 出版年：2009
• 出版时间：November 24, 2009
• 年：2009
• 卷：21
• 期：22
• 页码：5443-5455
• 全文大小：1159K
• 年卷期：v.21,no.22(November 24, 2009)
• ISSN：1520-5002

文摘

The application of two novel metalorganic complexes, namely the isostructural tris(N,N’-diisopropyl-2-dimethlyamido-guanidinato)gadolinium(III) (1) and tris(N,N’-diisopropyl-2-dimethlyamido-guanidinato)dysprosium(III) (2) as precursors for metalorganic chemical vapor deposition (MOCVD) of Gd₂O₃ and Dy₂O₃ is discussed. On the basis of the detailed thermal gravimetric analysis (TGA) and isothermal TGA studies, both the precursors are very volatile and able to deliver continuous mass transport into the gas phase. The extraordinary thermal stability of the precursors was revealed by nulcear magnetic resonance (NMR) decomposition studies. Depositions were carried out in the presence of oxygen at reduced pressure and varying the substrate temperature in the range 300−700 °C. Uniform films with reproducible quality were deposited on Si(100) and Al₂O₃(0001) substrates over the entire temperature range. Employing a multitechnique approach (XRD, SEM, AFM, EDX, XPS, RBS, SNMS, C−V), variations of the growth characteristics and film properties with deposition temperature are studied in terms of crystallinity, structure, surface roughness, composition, and electrical properties.