DNA Origami Mask for Sub-Ten-Nanometer Lithography

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• 作者：Cheikh Tidiane Diagne ; Christophe Brun ; Didier Gasparutto ; Xavier Baillin ; Raluca Tiron
• 刊名：ACS Nano
• 出版年：2016
• 出版时间：July 26, 2016
• 年：2016
• 卷：10
• 期：7
• 页码：6458-6463
• 全文大小：321K
• 年卷期：0
• ISSN：1936-086X

文摘

DNA nanotechnology is currently widely explored and especially shows promises for advanced lithography due to its ability to define nanometer scale features. We demonstrate a 9 × 14 nm² hole pattern transfer from DNA origami into an SiO₂ layer with a sub-10-nm resolution using anhydrous HF vapor in a semiconductor etching machine. We show that the resulting SiO₂ pattern inherits its shape from the DNA structure within a process time ranging from 30 to 60 s at an etching rate of 0.2 nm/s. At 600 s of etching, the SiO₂ pattern meets corrosion and the overall etching reaction is blocked. These results, in addition to the entire surface coverage by magnesium occurring on the substrate at a density of 1.1 × 10¹⁵ atom/cm², define a process window, fabrication rules, and limits for DNA-based lithography.