文摘
We present a new fabrication method of graphene spin-valve devices that yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si++/SiO2. Thereafter, we mechanically transfer a graphene鈥揾BN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi-, and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10 渭m combined with carrier mobilities exceeding 20鈥?00 cm2/(V s).
Keywords:
Graphene; boron nitride; spin transport; Hanle precession