Nanosecond Spin Lifetimes in Single- and Few-Layer Graphene鈥揾BN Heterostructures at Room Temperature
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文摘
We present a new fabrication method of graphene spin-valve devices that yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si++/SiO2. Thereafter, we mechanically transfer a graphene鈥揾BN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi-, and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10 渭m combined with carrier mobilities exceeding 20鈥?00 cm2/(V s).

Keywords:

Graphene; boron nitride; spin transport; Hanle precession

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