A TIPS-TPDO-tetraCN-Based n-Type Organic Field-Effect Transistor with a Cross-linked PMMA Polymer Gate Dielectric

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• 作者：Sungyeop Jung ; Mohammed Albariqi ; Guillaume Gruntz ; Thamer Al-Hathal ; Alba Peinado ; Enric Garcia-Caurel ; Yohann Nicolas ; Thierry Toupance ; Yvan Bonnassieux ; Gilles Horowitz
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：June 15, 2016
• 年：2016
• 卷：8
• 期：23
• 页码：14701-14708
• 全文大小：611K
• 年卷期：0
• ISSN：1944-8252

文摘

Recent improvement in the performance of the n-type organic semiconductors as well as thin gate dielectrics based on cross-linked polymers offers new opportunities to develop high-performance low-voltage n-type OFETs suitable for organic complementary circuits. Using TIPS-tetracyanotriphenodioxazine (TIPS-TPDO-tetraCN) and cross-linked poly(methyl methacrylate) (c-PMMA), respectively as n-type organic semiconductor and gate dielectric, linear regime field-effect mobility (1.8 ± 0.2) × 10^–2 cm² V^–1s^–1, small spatial standard deviation of threshold voltage (∼0.1 V), and operating voltage less than 3 V are attainable with the same device structure and contact materials used commonly for p-type OFETs. Through comparative static and dynamic characterizations of c-PMMA and PMMA gate dielectrics, it is shown that both smaller thickness and larger relative permittivity of c-PMMA contributes to reduced operating voltage. Furthermore, negligible hysteresis brings evidence to small trap states in the semiconductor near gate dielectric of the n-type OFETs with c-PMMA. The use of TIPS-TPDO-tetraCN and c-PMMA is fully compatible with polyethylene terephthalate substrate, giving promise to various flexible applications.