Fabricate Heterojunction Diode by Using the Modified Spray Pyrolysis Method to Deposit Nickel鈥揕ithium Oxide on Indium Tin Oxide Substrate
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- 作者：Chia-Ching Wu ; Cheng-Fu Yang
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2013
- 出版时间：June 12, 2013
- 年：2013
- 卷：5
- 期：11
- 页码：4996-5001
- 全文大小：485K
- 年卷期：v.5,no.11(June 12, 2013)
- ISSN：1944-8252
文摘
P-type lithium-doped nickel oxide (p-LNiO) thin films were deposited on an n-type indium tin oxide (ITO) glass substrate using the modified spray pyrolysis method (SPM), to fabricate a transparent p鈥搉 heterojunction diode. The structural, optical, and electrical properties of the p-LNiO and ITO thin films and the p-LNiO/n-ITO heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV鈥搗isible spectroscopy, Hall effect measurement, and current鈥搗oltage (I鈥?i>V) measurements. The nonlinear and rectifying I鈥?i>V properties confirmed that a heterojunction diode characteristic was successfully formed in the p-LNiO/n-ITO (p鈥搉) structure. The I鈥?i>V characteristic was dominated by space-charge-limited current (SCLC), and the Anderson model demonstrated that band alignment existed in the p-LNiO/n-ITO heterojunction diode.r>