Crystal Phase Transformation in Self-Assembled InAs Nanowire Junctions on Patterned Si Substrates

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• 作者：Torsten Rieger ; Daniel Rosenbach ; Daniil Vakulov ; Sebastian Heedt ; Thomas Schäpers ; Detlev Grützmacher ; Mihail Ion Lepsa
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：March 9, 2016
• 年：2016
• 卷：16
• 期：3
• 页码：1933-1941
• 全文大小：634K
• ISSN：1530-6992

文摘

We demonstrate the growth and structural characteristics of InAs nanowire junctions evidencing a transformation of the crystalline structure. The junctions are obtained without the use of catalyst particles. Morphological investigations of the junctions reveal three structures having an L-, T-, and X-shape. The formation mechanisms of these structures have been identified. The NW junctions reveal large sections of zinc blende crystal structure free of extended defects, despite the high stacking fault density obtained in individual InAs nanowires. This segment of zinc blende crystal structure in the junction is associated with a crystal phase transformation involving sets of Shockley partial dislocations; the transformation takes place solely in the crystal phase. A model is developed to demonstrate that only the zinc blende phase with the same orientation as the substrate can result in monocrystalline junctions. The suitability of the junctions to be used in nanoelectronic devices is confirmed by room-temperature electrical experiments.