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• 作者：Satoru Sato ; Shu Seki ; Guangfu Luo ; Mitsuaki Suzuki ; Jing Lu ; Shigeru Nagase ; Takeshi Akasaka
• 刊名：The Journal of the American Chemical Society
• 出版年：2012
• 出版时间：July 18, 2012
• 年：2012
• 卷：134
• 期：28
• 页码：11681-11686
• 全文大小：439K
• 年卷期：v.134,no.28(July 18, 2012)
• ISSN：1520-5126

文摘

Fullerene crystals or films have drawn much interest because they are good candidates for use in the construction of electronic devices. The results of theoretical calculations revealed that the conductivity properties of I_h-C₈₀ endohedral metallofullerenes (EMFs) vary depending on the encapsulated metal species. We experimentally investigated the solid-state structures and charge-carrier mobilities of I_h-C₈₀ EMFs La₂@C₈₀, Sc₃N@C₈₀, and Sc₃C₂@C₈₀. The thin film of Sc₃C₂@C₈₀ exhibits a high electron mobility 渭 = 0.13 cm² V^鈥? s^鈥? under normal temperature and atmospheric pressure, as determined using flash-photolysis time-resolved microwave conductivity measurements. This electron mobility is 2 orders of magnitude higher than the mobility of La₂@C₈₀ or Sc₃N@C₈₀.