Effect of Electrode Materials on AlN-Based Bipolar and Complementary Resistive Switching
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- 作者：Chao Chen ; Shuang Gao ; Guangsheng Tang ; Huadong Fu ; Guangyue Wang ; Cheng Song ; Fei Zeng ; Feng Pan
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2013
- 出版时间：March 13, 2013
- 年：2013
- 卷：5
- 期：5
- 页码：1793-1799
- 全文大小：394K
- 年卷期：v.5,no.5(March 13, 2013)
- ISSN：1944-8252
文摘
We report the complementary resistive switching (CRS) behaviors in aluminum nitride (AlN)-based memory devices as the promising new material system for large-scale integration of passive crossbar arrays. By utilizing different electrodes (Cu, Pt, and TiN), CRS characteristics are demonstrated in both TiN/AlN/Cu/AlN/TiN electrochemical metallization cells and Pt/AlN/TiN/AlN/Pt ionic resistive switching systems. The instability of Pt/AlN/Cu/AlN/Pt based CRS is explained by the relatively small reset voltage caused by the thermal effects enhanced reset process in the corresponding bipolar resistive switching element. It is concluded that the prerequisite for reliable and stable CRS is that the reset voltage of the bipolar resistive switching element must be much larger than half of the set voltage.