Effects of Source Materials and Container on Growth Process of SiC Crystal

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• 作者：Junlin Liu ; Jiqiang Gao ; Jikuan Cheng ; Xian Jiang ; Jianfeng Yang ; Guanjun Qiao
• 刊名：Crystal Growth & Design
• 出版年：2006
• 出版时间：September 2006
• 年：2006
• 卷：6
• 期：9
• 页码：2166 - 2168
• 全文大小：333K
• 年卷期：v.6,no.9(September 2006)
• ISSN：1528-7505

文摘

Nucleation of SiC polycrystals was investigated using TaC and graphite lids. TaC and graphite containers were alsoused to compare the growth rates of SiC crystal in four systems (TaC + SiC, C + SiC, TaC + Si + SiC, and C + Si + SiCsystems). The experimental results indicated that graphite lids provide growth conditions for SiC polycrystals that restrict the radialdirection growth of seed. The TaC lid can restrain nucleation of SiC polycrystals, which creates better growth conditions for seedalong the radial direction. The growth rates of SiC crystal for the TaC + Si + SiC and C + Si + SiC systems are higher than thoseof the TaC + SiC and C + SiC systems.