Photoluminescence Properties of Neat and Dy3+-Doped Gd3Ga5O12 Nanocrystals

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• 作者：Wancong Lü ; ^&#8224 ; ^‡ ; ; Han Zhou^&#8224 ; ^‡ ; ; Guitang Chen^&#8224 ; ^‡ ; ; Jianfu Li^&#8224 ; ; Zhaojie Zhu^&#8224
• 刊名：Journal of Physical Chemistry C
• 出版年：2009
• 出版时间：March 5, 2009
• 年：2009
• 卷：113
• 期：9
• 页码：3844-3849
• 全文大小：249K
• 年卷期：v.113,no.9(March 5, 2009)
• ISSN：1932-7455

文摘

Neat and Dy³⁺-doped Gd₃Ga₅O₁₂ nanocrystals have been successfully prepared via a propellant combustion method. A broad-band photoluminescence (PL) blue emission at 430 nm related to Ga₂O₃ in the Gd₃Ga₅O₁₂ nanocrystals is observed. The characteristic PL emissions of Dy³⁺ and the broad-band PL blue emission at 430 nm can be observed in Gd₃Ga₅O₁₂/Dy³⁺ samples. An energy transfer process from the host “luminescent centers” to Dy³⁺ is demonstrated. The lifetimes of the broad-band PL blue emission and the characteristic PL emission of Dy³⁺ are estimated. The efficiency of this energy transfer is determined up to 19.6%. The study on the influence of the excitation wavelength and the doping concentration of Dy³⁺ on the luminescent emission of the samples was performed under the excitation of different UV wavelengths. A white light with the CIE (Commission International de l′Eclairage) color coordinates (0.32, 0.34) was achieved. This material may find potential applications in lighting, optoelectronics, and imaging technologies.