AB-Stacked Multilayer Graphene Synthesized via Chemical Vapor Deposition: A Characterization by Hot Carrier Transport
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- 作者：Carlos Diaz-Pinto ; Debtanu De ; Viktor G. Hadjiev ; Haibing Peng
- 刊名：ACS Nano
- 出版年：2012
- 出版时间：February 28, 2012
- 年：2012
- 卷：6
- 期：2
- 页码：1142-1148
- 全文大小：385K
- 年卷期：v.6,no.2(February 28, 2012)
- ISSN：1936-086X
文摘
We report the synthesis of AB-stacked multilayer graphene via ambient pressure chemical vapor deposition on Cu foils and demonstrate a method to construct suspended multilayer graphene devices. In four-terminal geometry, such devices were characterized by hot carrier transport at temperatures down to 240 mK and in magnetic fields up to 14 T. The differential conductance (dI/dV) shows a characteristic dip at longitudinal voltage bias V = 0 at low temperatures, indicating the presence of hot electron effect due to a weak electron鈥損honon coupling. Under magnetic fields, the magnitude of the dI/dV dip diminishes through the enhanced intra-Landau level cyclotron phonon scattering. Our results provide new perspectives in obtaining and understanding AB-stacked multilayer graphene, important for future graphene-based applications.