Air-Stable, Solution-Processable n-Channel and Ambipolar Semiconductors for Thin-Film Transistors Based on the Indenofluorenebis(dicyanovinylene) Core

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• 作者：Hakan Usta ; Antonio Facchetti ; Tobin J. Marks
• 刊名：Journal of the American Chemical Society
• 出版年：2008
• 出版时间：July 9, 2008
• 年：2008
• 卷：130
• 期：27
• 页码：8580 - 8581
• 全文大小：424K
• 年卷期：v.130,no.27(July 9, 2008)
• ISSN：1520-5126

文摘

We present here the synthesis, characterization, and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis(dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10−0.16 cm²/V s in air, low turn-on voltages (~0 to +5 V), and high on/off ratios of 10⁷−10⁸. These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution