The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements

详细信息    查看全文

• 作者：Nicolas Thillosen ; Kathrin Sebald ; Hilde Hardtdegen ; Ralph Meijers ; Raffaella Calarco ; Simone Montanari ; Nicoleta Kaluza ; Jü ; rgen Gutowski ; and Hans Lü ; th
• 刊名：Nano Letters
• 出版年：2006
• 出版时间：April 2006
• 年：2006
• 卷：6
• 期：4
• 页码：704 - 708
• 全文大小：212K
• 年卷期：v.6,no.4(April 2006)
• ISSN：1530-6992

文摘

In the present paper, studies on the state of strain in single and ensembles of nanocolumns investigated by photoluminescence spectroscopywill be presented. The GaN nanocolumns were either grown in a bottom-up approach or prepared in a top-down approach by etching compactGaN layers grown on Si(111) and sapphire (0001) substrates. Experimental evidence for strain relaxation of the nanocolumns was found. Thedifference and development of the strain value for different nanocolumns could be verified by spatially resolved micro-photoluminescence onsingle nanocolumns separated from their substrate. A common D⁰X spectral position at 3.473 eV was found for all separated single GaNnanocolumns independent of the substrate or processing technique used, as expected for a relaxed system.