Atomic Layer Deposition of Gallium Sulfide Films Using Hexakis(dimethylamido)digallium and Hydrogen Sulfide

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• 作者：Xiangbo Meng ; Joseph A. Libera ; Timothy T. Fister ; Hua Zhou ; Jenny K. Hedlund ; Paul Fenter ; Jeffrey W. Elam
• 刊名：Chemistry of Materials
• 出版年：2014
• 出版时间：January 28, 2014
• 年：2014
• 卷：26
• 期：2
• 页码：1029-1039
• 全文大小：741K
• ISSN：1520-5002

文摘

Gallium sulfide (GaS_x) was synthesized for the first time via atomic layer deposition (ALD), using hexakis(dimethylamido)digallium and hydrogen sulfide. The growth characteristics and surface reaction mechanism for the GaS_x ALD were investigated using in situ quartz crystal microbalance, quadrupole mass spectrometry, and Fourier transform infrared spectroscopy measurements. The as-deposited films were analyzed for their surface morphology, elemental stoichiometry, chemical states and stability, and crystallinity, using a variety of characterization techniques. These measurements revealed that the GaS_x growth was self-limiting in the temperature range of 125鈥?25 掳C and the growth per cycle decreased linearly with increasing temperature, from 1.0 脜/cycle at 125 掳C to 0.5 脜/cycle at 225 掳C. The S/Ga ratio was between 1.0 and 1.2 in the temperature range of 125鈥?00 掳C, but decreased to 0.75 at 225 掳C. The GaS_x films were amorphous and the refractive index increased from 1.8 to 2.5 with increasing temperature. Significantly, electrochemical testing showed that the ALD GaS_x is a promising lithium-ion battery (LIB) anode material, exhibiting reliable cyclability and a high specific capacity of 770 mAh/g at a current density of 320 mA/g in the voltage window of 0.01鈥?.00 V.