Flexible Low-Voltage Polymer Thin-Film Transistors Using Supercritical CO2-Deposited ZrO2 Dielectrics

详细信息    查看全文

• 作者：Qingshuo Wei ; Eunyoung You ; Nicholas R. Hendricks ; Alejandro L. Briseno ; James J. Watkins
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2012
• 出版时间：May 23, 2012
• 年：2012
• 卷：4
• 期：5
• 页码：2322-2324
• 全文大小：225K
• 年卷期：v.4,no.5(May 23, 2012)
• ISSN：1944-8252

文摘

The fabrication of low-voltage flexible organic thin film transistors using zirconia (ZrO₂) dielectric layers prepared via supercritical fluid deposition was studied. Continuous, single-phase films of approximately 30 nm thick ZrO₂ were grown on polyimide (PI)/aluminum (Al) substrates at 250 掳C via hydrolysis of tetrakis(2,2,6,6-tetramethyl-3,5-heptane-dionato) zirconium in supercritical carbon dioxide. This dielectric layer showed a high areal capacitance of 317 nF cm^鈥? at 1 kHz and a low leakage current of 1.8 脳 10^鈥? A cm^鈥? at an applied voltage of 鈭? V. By using poly(3-hexylthiophene) (P3HT) as a semiconductor, we have fabricated flexible thin film transistors operating at V_DS = 鈭?.5 V and V_G in a range from 0.5 V to 鈭? V, with on/off ratios on the order of 1 脳 10³ and mobility values higher than 0.1 cm²/(V s).

Keywords:

supercritical fluid deposition; zirconia; high-k; low voltage; organic transistors and polythiophene