Temperature-Dependent Raman Spectroscopy of Titanium Trisulfide (TiS3) Nanoribbons and Nanosheets

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• 作者：Amit S. Pawbake ; Joshua O. Island ; Eduardo Flores ; Jose Ramon Ares ; Carlos Sanchez ; Isabel J. Ferrer ; Sandesh R. Jadkar ; Herre S. J. van der Zant ; Andres Castellanos-Gomez ; Dattatray J. Late
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：November 4, 2015
• 年：2015
• 卷：7
• 期：43
• 页码：24185-24190
• 全文大小：455K
• ISSN：1944-8252

文摘

Titanium trisulfide (TiS<sub>3sub>) has recently attracted the interest of the 2D community because it presents a direct bandgap of 鈭?.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm<sup>2sup> V<sup>鈥?sup> s<sup>鈥?sup>. However, a study of the vibrational properties of TiS<sub>3sub>, relevant to understanding the electron鈥損honon interaction that can be the main mechanism limiting the charge carrier mobility, is still lacking. In this work, we take the first steps to study the vibrational properties of TiS<sub>3sub> through temperature-dependent Raman spectroscopy measurements of TiS<sub>3sub> nanoribbons and nanosheets. Our investigation shows that all the Raman modes linearly soften (red shift) as the temperature increases from 88 to 570 K due to anharmonic vibrations of the lattice, which also includes contributions from the lattice thermal expansion. This softening with the temperature of the TiS<sub>3sub> modes is more pronounced than that observed in other 2D semiconductors, such as MoS<sub>2sub>, MoSe<sub>2sub>, WSe<sub>2sub>, and black phosphorus (BP). This marked temperature dependence of the Raman spectra could be exploited to determine the temperature of TiS<sub>3sub> nanodevices by using Raman spectroscopy as a noninvasive and local thermal probe. Interestingly, the TiS<sub>3sub> nanosheets show a stronger temperature dependence of the Raman modes than the nanoribbons, which we attribute to lower interlayer coupling in the nanosheets.