The synthesis and characterization of a series ofpolyethers and volatile, low-meltin
gpolyether complexes ofbis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)barium havin
gthe
general formulaBa(hfa)
2·RO(CH
2CH
2O)
nR'where R = R' = CH
3,
n = 3; R =CH
3, R' = C
2H
5,
n = 3; R = R' = H,
n = 5, 6; R = R' =CH
3,
n = 4; R = CH
3, R' =C
2H
5,
n = 5; R =CH
3, R'=
n-C
4H
9,
n = 5, 6; R= CH
3, R = C
5H
11O,
n= 3; R = CH
3, R' =
n-C
6H
13,
n = 4, 5; R= C
2H
5,R' =
n-C
4H
9,
n = 5; R=
n-C
4H
9, R' =
n-C
4H
9,
n = 4, 6; R =
n-C
4H
9, R' =
n-C
6H
13,
n = 5arereported. The complexes are conveniently synthesized by reactionof
n-propylammonium
+hfa
- in DMF with an aqueous solution ofBa(NO
3)
2 and the polyether or,alternatively, byreaction of the polyether with Ba(hfa)
2 in toluene.These new complexes were characterizedby elemental analysis, FT-IR,
1H,
13C, and
19F NMR, MS, X-ray diffraction(Ba(hfa)
2·CH
3O(CH
2CH
2O)
3CH
3·H
2O,Ba(hfa)
2·CH
3O(CH
2CH
2O)
5C
2H
5),and thermo
gravimetric analysis. Themeltin
g points of the complexes are stron
gly dependent on thearchitecture of the polyetherchain and dimensions of the terminal polyether substituent, with thelowest meltin
g pointscorrespondin
g to the lon
gest polyethers havin
g the lar
gest terminal
groups. The volatilityof the Ba(hfa)
2·polyether compounds isdependent on molecular wei
ght and molecularstructure; however, there is little direct correlation between meltin
gpoint depression andenhanced volatility. The applicability of these complexes inmetal-or
ganic chemical vapordeposition is demonstrated by the successful
growth of phase-pureBaTiO
3 thin films usin
gBa(hfa)
2·CH
3O(CH
2CH
2O)
5C
2H
5as the Ba source. Phase composition and epitaxy inthesefilms is analyzed by ener
gy-dispersive X-ray spectroscopy and X-raydiffraction
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