文摘
Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO<sub>3–xsub> RRAM device using anodic treatment in a room-temperature process. The flexible NP WO<sub>3–xsub> RRAM device showed bipolar switching characteristics and a high I<sub>ONsub>/I<sub>OFFsub> ratio of ∼10<sup>5sup>. The device also showed stable retention time over 5 × 10<sup>5sup> s, outstanding cell-to-cell uniformity, and bending endurance over 10<sup>3sup> cycles when measured in both the flat and the maximum bending conditions.