文摘
The III–V nanowire quantum dots (NWQDs) monolithically grown on silicon substrates, combining the advantages of both one- and zero-dimensional materials, represent one of the most promising technologies for integrating advanced III–V photonic technologies on a silicon microelectronics platform. However, there are great challenges in the fabrication of high-quality III–V NWQDs by a bottom-up approach, that is, growth by the vapor–liquid–solid method, because of the potential contamination caused by external metal catalysts and the various types of interfacial defects introduced by self-catalyzed growth. Here, we report the defect-free self-catalyzed III–V NWQDs, GaAs quantum dots in GaAsP nanowires, on a silicon substrate with pure zinc blende structure for the first time. Well-resolved excitonic emission is observed with a narrow line width. These results pave the way toward on-chip III–V quantum information and photonic devices on silicon platform.