Graphene-Assisted Chemical Etching of Silicon Using Anodic Aluminum Oxides as Patterning Templates

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• 作者：Jungkil Kim ; Dae Hun Lee ; Ju Hwan Kim ; Suk-Ho Choi
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：November 4, 2015
• 年：2015
• 卷：7
• 期：43
• 页码：24242-24246
• 全文大小：375K
• ISSN：1944-8252

文摘

We first report graphene-assisted chemical etching (GaCE) of silicon by using patterned graphene as an etching catalyst. Chemical-vapor-deposition-grown graphene transferred on a silicon substrate is patterned to a mesh with nanohole arrays by oxygen plasma etching using an anodic- aluminum-oxide etching mask. The prepared graphene mesh/silicon is immersed in a mixture solution of hydrofluoric acid and hydro peroxide with various molecular fractions at optimized temperatures. The silicon underneath graphene mesh is then selectively etched to form aligned nanopillar arrays. The morphology of the nanostructured silicon can be controlled to be smooth or porous depending on the etching conditions. The experimental results are systematically discussed based on possible mechanisms for GaCE of Si.