InAs/GaAs Core鈥揝hell Nanowires

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• 作者：Ronit Popovitz-Biro ; Andrey Kretinin ; Palle Von Huth ; Hadas Shtrikman
• 刊名：Crystal Growth & Design
• 出版年：2011
• 出版时间：September 7, 2011
• 年：2011
• 卷：11
• 期：9
• 页码：3858-3865
• 全文大小：1210K
• 年卷期：v.11,no.9(September 7, 2011)
• ISSN：1528-7505

文摘

Gold-assisted vapor鈥搇iquid鈥搒olid (VLS) growth of InAs nanowires was optimized and used for growth of highly mismatched InAs/GaAs core鈥搒hell heterostructure nanowires having the wurtzite structure. The motivation is 2-fold, providing means for surface passivation of InAs nanowires (NWs) for electronic devices and ballistic transport applications on one hand and for studying the structural properties of a highly mismatched system in a core鈥搒hell, cylindrical configuration on the other hand. The misfit between the InAs core and the mostly relaxed GaAs shell was deduced from the average spacing between the edge dislocations, the periodicity of the Moir茅 fringes resulting from the overlap between the InAs and GaAs lattices and the splitting in the electron diffraction images. Both line and loop edge dislocations are formed in the strain relaxation process. The experimental radial and axial misfits were found to be approximately 6 卤 1% and 4 卤 0.5%, respectively.