Anisotropic Wet Etched Silicon Substrates for Reoriented and Selective Growth of ZnO Nanowires and Enhanced Hydrophobicity
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- 作者：Sisi Li ; Jie Hu ; Junjun Li ; Jinghua Tian ; Zhitao Han ; Xiongtu Zhou ; Yong Chen
- 刊名：Langmuir
- 出版年：2011
- 出版时间：June 7, 2011
- 年：2011
- 卷：27
- 期：11
- 页码：6549-6553
- 全文大小：842K
- 年卷期：v.27,no.11(June 7, 2011)
- ISSN：1520-5827
文摘
Herein we report the fabrication of ZnO nanowires on anisotropic wet etched silicon substrates by selective hydrothermal growth. 100 oriented silicon wafers were first patterned by anisotropic wet etch with a KOH solution, resulting in V-shaped stripes of different periods. Then, a thin layer of gold was deposited and annealed to promote the hydrothermal growth of ZnO nanowires. It was found that the growth rate of ZnO nanowires on 111 surfaces was much higher than that on 100 surfaces. As a first application of such micro- and nanostructured surfaces, we show enhanced wetting properties by measuring the contact angle of water droplets on the samples obtained under different patterning and growth conditions. Our results also demonstrated the possibility of tuning the contact angle of the sample in the range between 115掳 and 155掳, by changing either the pattern of the silicon template or the hydrothermal growth conditions.