Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment

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• 作者：Jaehyun Yang ; Sunkook Kim ; Woong Choi ; Sang Han Park ; Youngkwon Jung ; Mann-Ho Cho ; Hyoungsub Kim
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2013
• 出版时间：June 12, 2013
• 年：2013
• 卷：5
• 期：11
• 页码：4739-4744
• 全文大小：324K
• 年卷期：v.5,no.11(June 12, 2013)
• ISSN：1944-8252

文摘

We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS₂ crystals on the subsequent growth of Al₂O₃ and HfO₂ films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water oxidant. Due to the formation of an ultrathin Mo-oxide layer on the MoS₂ surface, the surface coverage of Al₂O₃ and HfO₂ films was significantly improved compared to those on pristine MoS₂, even at a high ALD temperature. These results indicate that the surface modification of MoS₂ by oxygen plasma treatment can have a major impact on the subsequent deposition of high-k thin films, with important implications on their integration in thin film transistors.

Keywords:

MoS₂; oxygen plasma treatment; atomic layer deposition; Al₂O₃; HfO₂