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• 作者：Sum-Gyun Yi ; Sung Hyun Kim ; Sungjin Park ; Donggun Oh ; Hwan Young Choi ; Nara Lee ; Young Jai Choi ; Kyung-Hwa Yoo
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：December 14, 2016
• 年：2016
• 卷：8
• 期：49
• 页码：33811-33820
• 全文大小：758K
• ISSN：1944-8252

文摘

We developed Schottky junction photovoltaic cells based on multilayer Mo<sub>1–xsub>W<sub>xsub>Se<sub>2sub> with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo<sub>0.5sub>W<sub>0.5sub>Se<sub>2sub> Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe<sub>2sub> and WSe<sub>2sub> devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo<sub>0.5sub>W<sub>0.5sub>Se<sub>2sub> devices. Furthermore, we showed that Mo<sub>0.5sub>W<sub>0.5sub>Se<sub>2sub>-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.