Vertically Stacked Color Tunable Light-Emitting Diodes Fabricated Using Wafer Bonding and Transfer Printing
详细信息    查看全文
文摘
We report on the vertically stacked color tunable light-emitting diodes (LEDs) fabricated using wafer bonding with an indium tin oxide (ITO) layer and transfer printing by the laser lift-off process. Employing optically transparent and electrically conductive ITO as an adhesion layer enables to bond the GaN-based blue and AlGaInP-based yellow LEDs. We find out that the interdiffusion of In, O, and Ga at the interface between ITO and GaP allows the strong bonding of the heterogeneous optoelectronic materials and the integration of two different color LEDs on a single substrate. The efficacy of this method is demonstrated by showing the successful control of color coordinate from the vertically stacked LEDs by modulating the individual intensity of blue and yellow emissions.

Keywords:

color tunable light-emitting diodes; vertical integration; ITO adhesion layer; wafer bonding; transfer printing

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700