Nonvolatile Memory Devices Prepared from Sol鈥揋el Derived Niobium Pentoxide Films

详细信息    查看全文

• 作者：Hyunhee Baek ; Chanwoo Lee ; Jungkyu Choi ; Jinhan Cho
• 刊名：Langmuir
• 出版年：2013
• 出版时间：January 8, 2013
• 年：2013
• 卷：29
• 期：1
• 页码：380-386
• 全文大小：412K
• 年卷期：v.29,no.1(January 8, 2013)
• ISSN：1520-5827

文摘

We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb₂O₅) films prepared using sol鈥揼el chemistry. A sol鈥揼el derived solution of niobium ethoxide, a precursor to Nb₂O₅, was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 掳C to form a Nb₂O₅ film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb₂O₅ films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as 鈥渆lectroforming鈥? a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 卤 0.05 V_RESET and 1.03 卤 0.06 V_SET) with a high ON/OFF current ratio above 10⁸. The reported approach offers opportunities for preparing Nb₂O₅-based resistive switching memory devices from solution process.