文摘
In this work, we investigate the improvement in the piezoelectric performance of a ZnO nanowire film by a chemical doping and interfacial modification strategy. The Cl-doped ZnO nanowire films were synthesized by a modified hydrothermal approach and characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, photoluminescence spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and I–V characterization. The effect of the Cl dopant with different doping concentrations has been demonstrated by an improvement of the piezoelectric output performance due to the induced lattice strain along the ZnO c-axis, which significantly facilitates the piezocharge separation under the applied stress. The experimental results indicate that the existence of lattice strain along the doped ZnO nanowire polar axis resulted from the different ionic sizes between Cl and O. More importantly, by preparing a Cl-doped ZnO nanowire film on a p-type CuO film, our experimental results reveal that the piezoelectric output voltage and current of the Cl-doped ZnO nanowire film can be further enhanced due to the ability of CuO to reduce the electron screening effect. We demonstrate that the utilization of chemical doping and interfacial modification can be considered as a compatible strategy for realizing a high-performance energy-harvesting device.