Resolving Voltage鈥揟ime Dilemma Using an Atomic-Scale Lever of Subpicosecond Electron鈥揚honon Interaction
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- 作者：Xiang Yang ; Ioan Tudosa ; Byung Joon Choi ; Albert B. K. Chen ; I-Wei Chen
- 刊名：Nano Letters
- 出版年：2014
- 出版时间：September 10, 2014
- 年：2014
- 卷：14
- 期：9
- 页码：5058-5067
- 全文大小：445K
- ISSN：1530-6992
文摘
Nanoelectronic memory based on trapped charge need to be small and fast, but fundamentally it faces a voltage鈥搕ime dilemma because the requirement of a high-energy barrier for data retention under zero/low electrical stimuli is incompatible with the demand of a low-energy barrier for fast switching under a modest programming voltage. One solution is to embed an atomic-level lever of localized electron鈥損honon interaction to autonomously reconfigure trap-site鈥檚 barrier in accordance to the electron-occupancy of the site. Here we demonstrate an atomically levered resistance-switching memory built on locally flexible amorphous nanometallic thin films: charge detrapping can be triggered by a mechanical force, the fastest one being a plasmonic Lorentz force induced by a nearby electron or positron bunch passing in 10鈥?3 s. The observation provided the first real-time evidence of an electron鈥損honon interaction in action, which enables nanometallic memory to turn on at a subpicosecond speed yet retain long-term memory, thus suitable for universal memory and other nanoelectron applications.