Efficient High Area OFETs by Solution Based Processing of a -Electron Rich Donor
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- 作者：Pawel Miskiewicz ; Marta Mas-Torrent ; Jaroslaw Jung ; Sylwia Kotarba ; Ireneusz Glowacki ; Elba Gomar-Nadal ; David B. Amabilino ; Jaume Veciana ; Bä ; rbel Krause ; Dina Carbone ; Concepció ; Rovira ; Ja
- 刊名：Chemistry of Materials
- 出版年：2006
- 出版时间：October 3, 2006
- 年：2006
- 卷：18
- 期：20
- 页码：4724 - 4729
- 全文大小：313K
- 年卷期：v.18,no.20(October 3, 2006)
- ISSN：1520-5002
文摘
We report on the preparation of high performance field-effect transistors (FETs) based on large areasof aligned films of a TTF derivative, namely, tetrakis-(octadecylthio)-tetrathiafulvalene (TTF-4SC18).TTF-4SC18 assembles into one-dimensional stacks in which the long alkyl chains promote intermolecular
- overlapping due to their extremely closely packed nature. The films were prepared from solutionby zone-casting, a simple technique that does not require the use of preoriented substrates. The filmswere characterized by AFM and X-ray, indicating an extremely high crystalline quality. The TTF moleculesare tilted with respect to the substrate surface and are well-aligned in the casting direction. More than 40FETs were measured, showing a remarkable reproducibility of their performance. The average chargecarrier mobility value measured along the casting direction was about 0.006 cm2/V s for a channel lengthL = 100 
m and about 0.01 cm2/V s for L = 80 m and L = 50 m. The FET mobilities determined inthe direction perpendicular to the orientation were ca. 1 order of magnitude lower. We found that all thedevices after annealing exhibited an enhanced performance with FETs mobilities about 1 order ofmagnitude higher. The best devices revealed a charge carrier mobility close to 0.1 cm2/V s with anon/off ratio of the order of 104.
- overlapping due to their extremely closely packed nature. The films were prepared from solutionby zone-casting, a simple technique that does not require the use of preoriented substrates. The filmswere characterized by AFM and X-ray, indicating an extremely high crystalline quality. The TTF moleculesare tilted with respect to the substrate surface and are well-aligned in the casting direction. More than 40FETs were measured, showing a remarkable reproducibility of their performance. The average chargecarrier mobility value measured along the casting direction was about 0.006 cm2/V s for a channel lengthL = 100 m and about 0.01 cm2/V s for L = 80 m and L = 50 m. The FET mobilities determined inthe direction perpendicular to the orientation were ca. 1 order of magnitude lower. We found that all thedevices after annealing exhibited an enhanced performance with FETs mobilities about 1 order ofmagnitude higher. The best devices revealed a charge carrier mobility close to 0.1 cm2/V s with anon/off ratio of the order of 104.