Quantitatively Enhanced Reliability and Uniformity of High-魏 Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers

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• 作者：Vinod K. Sangwan ; Deep Jariwala ; Stephen A. Filippone ; Hunter J. Karmel ; James E. Johns ; Justice M. P. Alaboson ; Tobin J. Marks ; Lincoln J. Lauhon ; Mark C. Hersam
• 刊名：Nano Letters
• 出版年：2013
• 出版时间：March 13, 2013
• 年：2013
• 卷：13
• 期：3
• 页码：1162-1167
• 全文大小：364K
• 年卷期：v.13,no.3(March 13, 2013)
• ISSN：1530-6992

文摘

The full potential of graphene in integrated circuits can only be realized with a reliable ultrathin high-魏 top-gate dielectric. Here, we report the first statistical analysis of the breakdown characteristics of dielectrics on graphene, which allows the simultaneous optimization of gate capacitance and the key parameters that describe large-area uniformity and dielectric strength. In particular, vertically heterogeneous and laterally homogeneous Al₂O₃ and HfO₂ stacks grown via atomic-layer deposition and seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride organic monolayer exhibit high uniformities (Weibull shape parameter 尾 > 25) and large breakdown strengths (Weibull scale parameter, E_BD > 7 MV/cm) that are comparable to control dielectrics grown on Si substrates.

Keywords:

Epitaxial graphene; alumina; hafnia; Weibull analysis; dielectric breakdown; nanoelectronics