Properties of Cu(thd)2 as a Precursor to Prepare Cu/SiO2 Catalyst Using the Atomic Layer Epitaxy Technique
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- 作者：Ching S. Chen ; Jarrn H. Lin ; Jainn H. You ; Chi R. Chen
- 刊名：Journal of the American Chemical Society
- 出版年：2006
- 出版时间：December 20, 2006
- 年：2006
- 卷：128
- 期：50
- 页码：15950 - 15951
- 全文大小：81K
- 年卷期：v.128,no.50(December 20, 2006)
- ISSN：1520-5126
文摘
The new Cu/SiO2 catalyst is developed by the atomic layer epitaxy (ALE) method. The ALE-Cu/SiO2 catalyst with high dispersion and nanoscale Cu particles appears to have very different catalytic properties from those of the typical Cu-based catalysts, which have satisfactory thermal stability to resist the sintering of Cu particles at 773 K. Due to the formation of small Cu particles, the ALE-Cu/SiO2 can strongly bind CO and give high catalytic activity for CO2 converted to CO in the reverse water-gas-shift reaction. The catalytic activity decreases in the order of 2.4% ALE-Cu/SiO2 
2% Pt/SiO2 > 2% Pd/SiO2 
10.3% IM-Cu/SiO2.
2% Pt/SiO2 > 2% Pd/SiO2 10.3% IM-Cu/SiO2.