Syntheses and characterization of two polymorphs of Cu(TCNQ) have been carried out and the results correlatedto films of the materials. Reactions of CuI with TCNQ or [Cu(CH
3CN)
4][BF
4] with TCNQ
- lead to blue-purpleneedles of Cu(TCNQ) phase I (
1). A slurry of this kinetic product in CH
3CN yields a second crystalline phase ofCu(TCNQ), phase II (
2), which exhibits a platelet morphology. Powder X-ray diffraction and scanning electronmicroscopy data revealed that both phases are present in films of Cu(TCNQ) formed by oxidation of Cu foil byTCNQ in CH
3CN. X-ray photoelectron spectra of the two phases are indistinguishable from each other and areindicative of the presence of Cu(I). Single-crystal X-ray studies were undertaken on very small crystals of thetwo samples, the results of which reveal that subtle geometrical changes for the nitrile arrangements around thefour-coordinate Cu(I) centers lead to major changes in the architectural framework of the polymers. Phase I wasindexed in the tetragonal crystal system, but due to disorder and twinning, the crystal diffracted to only ~40
![](/images/entities/deg.gif)
in2
![](/images/gifchars/theta.gif)
. The data were solved and refined in the monoclinic
Pn space group. The polymeric motif consists of Cuatoms surrounded by four nitrile lone pairs of independent TCNQ
- molecules arranged in a distorted tetrahedralgeometry. A quadruply twinned crystal of Cu(TCNQ) phase II was indexed in the monoclinic system and resolvedby deconvolution methods. The Cu(I) ions in phase II occupy the tetrahedral positions of a Cooperite structure(PtS), and the TCNQ
- radicals occupy the square planar sites. In both phases there are two interpenetratinglattices present. In phase I the TCNQ
- units are involved in close
![](/images/gifchars/pi.gif)
-stacking interactions at ~3.24 Å whereas inphase II the closest approach of the rings is ~6.8 Å. In qualitative agreement with these observations are themagnetic properties;
1 is essentially diamagnetic and
2 displays Curie-Weiss behavior down to very lowtemperatures. The charge-transport properties of the samples revealed that, while they are both semiconductors,
1 is a good semiconductor with a room-temperature conductivity of 0.25 S cm
-1 and a band gap of 0.137 eVwhereas
2 is a very poor semiconductor with
![](/images/gifchars/sigma.gif)
(rt) = 1.3 × 10
-5 S cm
-1 and a band gap of 0.332 eV. Cu(TCNQ)film devices have been found to switch between two states that exhibit very similar conducting properties.