Effect of Interface Atomic Structure on the Electronic Properties of Nano-Sized Metal鈥揙xide Interfaces

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• 作者：Wei Qin ; Jiechang Hou ; Dawn A. Bonnell
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：January 14, 2015
• 年：2015
• 卷：15
• 期：1
• 页码：211-217
• 全文大小：432K
• ISSN：1530-6992

文摘

We report that the size dependence of electronic properties at nanosized metal鈥搒emiconducting oxide interfaces is significantly affected by the interface atomic structure. The properties of interfaces with two orientations are compared over size range of 20鈥?00 nm. The difference in interface atomic structure leads to electronic structure differences that alter electron transfer paths. Specifically, interfaces with a higher concentration of undercoordinated Ti result in enhanced tunneling due to the presence of defect states or locally reduced tunnel barrier widths. This effect is superimposed on the mechanisms of size dependent properties at such small scales.